document number: 86048 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.7, 30-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 fast avalanche sinterglass diode byw32, byw33, BYW34, byw35, byw36 vishay semiconductors mechanical data case: sod-57 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 369 mg features ? glass passivated junction ? hermetically sealed package ? low reverse current ? soft recovery characteristics ? compliant to rohs di rective 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? fast rectification an switching diode for example for tv-line output circuits an d switch mode power supply 949539 parts table part type differe ntiation package byw32 v r = 200 v; i fav = 2 a sod-57 byw33 v r = 300 v; i fav = 2 a sod-57 BYW34 v r = 400 v; i fav = 2 a sod-57 byw35 v r = 500 v; i fav = 2 a sod-57 byw36 v r = 600 v; i fav = 2 a sod-57 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics byw32 v r = v rrm 200 v byw33 v r = v rrm 300 v BYW34 v r = v rrm 400 v byw35 v r = v rrm 500 v byw36 v r = v rrm 600 v peak forward surge current t p = 10 ms, half sine wave i fsm 50 a repetitive peak forward current i frm 12 a average forward current ? = 180 i fav 2a non repetitive reverse avalanche energy i (br)r = 0.4 a e r 10 mj junction and storage temperature range t j = t stg - 55 to + 175 c maximum thermal resistance (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction ambient lead length l = 10 mm, t l = constant r thja 45 k/w on pc board with spacing 25 mm r thja 100 k/w
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 86048 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com rev. 1.7, 30-jul-10 byw32, byw33, BYW34, byw35, byw36 vishay semiconductors fast avalanche sinterglass diode typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - max. thermal re sistance vs. lead length fig. 2 - forward current vs. forward voltage fig. 3 - max. average forward current vs. ambient temperature fig. 4 - reverse current vs . junction temperature (c) electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit forward voltage i f = 1 a v f -0.951.1 v reverse current v r = v rrm i r -15a v r = v rrm , t j = 150 c i r - 60 150 a reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr - - 200 ns 0 20 40 80 60 100 120 15 10 5 0 202530 r thja - ther. re s i s t. junction/ambient (k/w) l - lead length (mm) 949552 ll t l = con s tant i f - forward current (a) 0.001 0.01 0.1 1 10 100 0 0.5 1.0 1.5 2.0 3.0 2.5 v f - forward voltage (v) 16345 t j = 25 c t j = 175 c 16346 i fav - average forward current (a) 0 20 40 60 80 100 120 140 160 180 t amb - ambient temperature (c) 2.5 2.0 1.5 1.0 0.5 0 v r = v rrm half s inewave r thja = 100 k/w pcb: d = 25 mm r thja = 45 k/w i = 10 mm 1 10 100 1000 25 50 75 100 125 150 175 t j - junction temperature (c) 16347 i r - rever s e current (a) v r = v rrm
byw32, byw33, BYW34, byw35, byw36 fast avalanche sinterglass diode vishay semiconductors document number: 86048 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.7, 30-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 fig. 5 - max. reverse power dissipat ion vs. junction te mperature fig. 6 - diode capacitance vs. reverse voltage fig. 7 - thermal response package dimensions in millimeters (inches): sod-57 0 50 250 100 150 200 300 25 50 75 100 125 150 175 t j - junction temperature (c) 16348 p r - rever s e power di ss ipation (mw) p r -limit at 100 % v r p r -limit at 80 % v r v r = v rrm 0 5 10 15 20 30 25 35 40 0.1 1 10 100 v r - rever s e voltage (v) 16349 c d - diode capacitance (pf) f = 1 mhz 1 10 100 1000 10 -5 10 1 10 0 10 1 10 0 10 -1 10 -2 10 -3 10 -4 t p - pul s e length ( s )i frm - repetitive peak forward current (a) 949561 z thp - thermal re s i s t. for pul s e cond. (k/w) s ingle pul s e v rrm = 600 v r thja = 100 k/w t amb = 25 c 45 c 50 c 70 c 100 c t p /t = 0.5 0.2 0.02 0.01 0.1 20543 3.6 (0.142) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 0.82 (0.032) max.
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